Semiconductor memory with insulation film embedded in groove for

Details Semiconductor memory with insulation film embedded in groove for Semiconductor memory with insulation film embedded in groove for

1994-11-29

1996-10-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257308, 257311, 257905, 257908, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

055613110

ABSTRACT:
A semiconductor memory having memory cells is formed on a semiconductor substrate. Each of the memory cells has a transistor and a capacitor. The transistor includes a channel region, a drain region and a source region aligned in a line and being insulated by an insulation film from an adjacent cell. Each of the memory cells has a gate electrode formed on the channel region with a gate insulating film therebetween. A pad electrode makes electrical contact with one of the source and drain regions of the memory cell and extends over the insulation film. A bit line makes electrical contact with the pad electrode above, extends in parallel to the line and is laterally isolated from one of the source and drain regions. A first insulating film is formed on the semiconductor substrate over the bit line. A first capacitor electrode is formed on the first insulating film, making electrical contact with the other of the source and drain regions of the memory cell through a contact hole opened through the first insulating film and insulated from the bit line by the first insulating film. A second capacitor electrode is formed on the first capacitor electrode with a second insulating film provided therebetween. The insulation film is embedded in a groove formed on the semiconductor substrate.

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Kinney et al., "A Non-Volatile Memory Cell Based on Ferroelectric Storage Capacitors", IEEE 1987, pp. 850-851.
Koyanagi et al., "Novel High Density, Stacked Capaitor MOS RAM", Japanese Journal of Applied Physics, vol. 18 (1979) Supplement 18-1, pp. 35-42.
Bell et al., "SIPMOS Technology, an Example of VLSI Precision Realized with Standard LSI for Power Transistors", Siemens Forsch.-u. Entwickl.-Ber. Bd., 9 (1980) Nr. 4, pp. 190-194.

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