Semiconductor device with outer diffusion layer

Details Semiconductor device with outer diffusion layer Semiconductor device with outer diffusion layer

1995-09-19

1997-07-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257373, 257375, 257390, 257399, 257408, H01L 2976

Patent

active

056486723

ABSTRACT:
A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power supply voltage, whereby the adjacent transistors are isolated from each other.

REFERENCES:
patent: 4929992 (1990-05-01), Thomas et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 5338960 (1994-08-01), Beasom
patent: 5514902 (1996-05-01), Kawasaki et al.

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