MOSFET with gradiently doped polysilicon gate electrode

Details MOSFET with gradiently doped polysilicon gate electrode MOSFET with gradiently doped polysilicon gate electrode

1997-01-29

2000-07-04

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257520, H01L 2976, H01L 2920

Patent

active

060842784

ABSTRACT:
In a MOSFET having a polysilicon gate electrode, the polysilicon layer of the gate electrode is nonuniformly doped with an impurity for the same type of conductivity as the source and drain regions such that the effective impurity concentration gradually and continuously decreases from a top section toward a bottom section adjacent to the gate oxide film and becomes minimum in the bottom section. When a high voltage is applied between the drain and the gate, a depletion layer is created in the bottom section of the polysilicon layer, whereby the electric field on the gate oxide film is reduced. Accordingly, the thickness of the gate oxide film can be reduced for high-speed operation. Besides, this MOSFET is useful in a high-voltage interface for a MOS circuit operated at a low supply voltage. The doping of the polysilicon layer is accomplished by ion implantation. It is suitable to employ a lightly doped drain (LDD) structure in this MOSFET.

Affiliated with

Also associated with

Rating

MOSFET with gradiently doped polysilicon gate electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET with gradiently doped polysilicon gate electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET with gradiently doped polysilicon gate electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1488911