Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-30
2000-07-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257321, 257330, 257334, 438259, H01L 2976
Patent
active
060842652
ABSTRACT:
The present invention proposes a novel structure of nonvolatile memories with recessed floating gates. A plurality of field oxides is formed on a semiconductor substrate. Buried bit lines are formed in the semiconductor substrate and beneath the field oxides. Between the field oxides over the buried bit lines, trenched floating gates are formed in the semiconductor substrate. Tunnel dielectrics are formed between the trenched floating gates and the semiconductor substrate. The interpoly dielectric is formed over the field oxides and the trenched floating gates and the control gates are formed on the interpoly dielectric. Because of the large area of the recessed tunnel dielectric and the recessed length of the channel, high-density shallow trench contactless nonvolatile memories can be achieved.
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Eckert II George C.
Saadat Mahshid
Texas Instruments - Acer Incorporated
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