Trench MOSFET having improved breakdown and on-resistance charac

Details Trench MOSFET having improved breakdown and on-resistance charac Trench MOSFET having improved breakdown and on-resistance charac

Filed on

1998-11-25

Date issued

2000-07-04

Examiner

Mintel, William

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

257330, 257331, 257332, 257334, 438206, H01L 2976, H01L 2994, H01L 31113, H01L 31119, H01L 31062

Type

Patent

Status

active

Patent number

060842644

Description

ABSTRACT:
A trench MOSFET is formed in a structure which includes a P-type epitaxial layer overlying an N+ substrate. An N drain region is implanted through the bottom of the trench into the P-epitaxial layer, and after a diffusion step extends between the N+ substrate and the bottom of the trench. The junction between the N drain region and the P-epitaxial layer extends between the N+ substrate and a sidewall of the trench. In some embodiments the epitaxial layer can have a stepped doping concentration or a threshold voltage adjust implant can be added. Alternatively, the drain region can be omitted, and the trench can extend all the way through the P-epitaxial layer into the N+ substrate. A MOSFET constructed in accordance with this invention can have a reduced threshold voltage and on-resistance and an increased punchthrough breakdown voltage.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5216275 (1993-06-01), Chen
patent: 5282018 (1994-01-01), Hiraki et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5610422 (1997-03-01), Yanagiya et al.
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5821583 (1998-10-01), Hshieh et al.
patent: 5910669 (1999-06-01), Chang et al.
patent: 5914503 (1999-06-01), Iwamuro et al.
patent: 5929481 (1999-07-01), Hshieh et al.

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