Etox cell programmed by band-to-band tunneling induced substrate

Details Etox cell programmed by band-to-band tunneling induced substrate Etox cell programmed by band-to-band tunneling induced substrate

1999-08-19

2000-07-04

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257315, 257316, H01L 29788

Patent

active

060842628

ABSTRACT:
An ETOX cell formed in a semiconductor substrate is disclosed. The ETOX cell includes a p-well formed within the substrate. A floating-gate is formed above the p-well, the floating-gate being separated from the substrate by a thin oxide layer. Next, a control gate is formed above the floating-gate, the floating-gate and the control gate being separated by a dielectric layer. A drain region is formed in the p-well and adjacent to a first edge of the floating-gate. The drain region is of a first dopant type. Finally, a source region is formed in the p-well and adjacent to a second edge of the floating-gate, the source region being of a second dopant type.

REFERENCES:
patent: 5814853 (1998-09-01), Chen

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