Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-20
2000-07-04
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438652, 438669, 438680, 438681, 438688, 438945, 438970, H01L 2144
Patent
active
060838329
ABSTRACT:
In a method of manufacturing semiconductor device, an aluminum film and a barrier metal film are formed on a semiconductor substrate and then an interlayer insulation film 15 is formed over the aluminum film and the barrier metal film. Then a PVD-Al film is formed over the entire upper surface of the interlayer insulation film by PVD, whereupon the PVD-Al film the interlayer insulation film are etched to open via holes, exposing part of the upper surface of the barrier metal film. Subsequently, via plugs are formed by filling metal, which includes aluminum, in the via holes by selective CVD with masking by a native oxide film formed on the upper surface of the PVD-Al film whereupon the native oxide film is removed by etching. Then a CVD-Al is formed over the entire upper surface of the PVD-Al film and the via plugs by CVD.
REFERENCES:
patent: 5976970 (1999-11-01), Dalal et al.
"A low temperature CVD A1 plug and interconnect process for 0.25 um metallization technologies" Fiordalice et al.
IEEE; 1996 Symposium on VLSI Technology DIgest of Technical Papers; pp. 42-43.
NEC Corporation
Niebling John F.
Zarneke David A.
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