Method for fabricating local interconnect

Details Method for fabricating local interconnect Method for fabricating local interconnect

1998-12-15

2000-07-04

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438233, 438618, 438230, 438303, H01L 214763

Patent

active

060838272

ABSTRACT:
A method for fabricating a local interconnect. A gate having a gate oxide layer, a gate polysilicon layer and a cap layer is formed on a provided substrate. A spacer is formed on the sidewall of the gate, and a source/drain region is formed in the substrate. A planarized dielectric layer is formed over the substrate to expose the cap layer. A portion of the dielectric layer and the spacer on one side of the gate is removed to form an opening, so that the source/drain region is exposed. The opening is transformed into a local-interconnect opening by removing the cap layer. A local interconnect is formed by forming a conductive layer in the local-interconnect opening.

REFERENCES:
patent: 5411909 (1995-05-01), Manning et al.
patent: 5466636 (1995-11-01), Cronin et al.
patent: 5773310 (1998-06-01), Park
patent: 5840609 (1998-11-01), Hyeon et al.
patent: 5897357 (1999-04-01), Wu et al.
patent: 6030876 (2000-02-01), Koike

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