Integrated circuit having a void between adjacent conductive lin

Details Integrated circuit having a void between adjacent conductive lin Integrated circuit having a void between adjacent conductive lin

1998-10-29

2000-07-04

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438422, 438623, 438624, 438760, 257522, 257634, H01L 214763, H01L 2131, H01L 2176, H01L 2900, H01L 2358

Patent

active

060838213

ABSTRACT:
The invention proposes methods for producing integrated circuits wherein the dielectric constant between closely spaced and adjacent metal lines is approaching 1. One method of the invention uses low-melting-point dielectric to form a barrier forming a void between conductive lines. Another method of the invention uses sidewall film to form a similar barrier.

REFERENCES:
patent: 3414395 (1968-12-01), Reese et al.
patent: 3607186 (1971-09-01), Bognar et al.
patent: 4106050 (1978-08-01), Riseman
patent: 4289846 (1981-09-01), Parks et al.
patent: 4323914 (1982-04-01), Berndlmaier et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5001079 (1991-03-01), Van Laarhoven et al.
patent: 5192715 (1993-03-01), Sliwa, Jr. et al.
patent: 5310700 (1994-05-01), Lien et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5338975 (1994-08-01), Cole, Jr. et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5512775 (1996-04-01), Cho
patent: 5534731 (1996-07-01), Cheung
patent: 5599745 (1997-02-01), Reinberg
patent: 5641709 (1997-06-01), Lee
patent: 5641712 (1997-06-01), Grivna et al.
patent: 5670828 (1997-09-01), Cheung et al.
patent: 5716888 (1998-02-01), Lur et al.
patent: 5837618 (1998-11-01), Avanzino et al.
patent: 5843836 (1998-12-01), Cheung et al.
patent: 5847439 (1998-12-01), Reinberg
patent: 5891797 (1999-04-01), Farrar

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