Method for forming fine multilayer resist patterns

Details Method for forming fine multilayer resist patterns Method for forming fine multilayer resist patterns

1983-03-25

1985-12-24

Kittle, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430322, 430325, 430326, 430330, 427 41, G03C 500

Patent

active

045606412

ABSTRACT:
Fine resist patterns having high sensitivity and steeply improved residual film ratio is obtained by forming a multilayer film consisting of organic substances on a substrate, making at least one layer other than the lowest layer of said multilayer film contain metal elements, irradiating said multilayer film with light or radiations, and developing with plasma.

REFERENCES:
patent: 4180604 (1979-12-01), Feng et al.
patent: 4283482 (1981-08-01), Hattori et al.
patent: 4307178 (1981-12-01), Kaplan et al.
patent: 4332879 (1982-06-01), Pastor et al.
patent: 4352870 (1982-10-01), Howard et al.
patent: 4396704 (1983-08-01), Taylor
patent: 4454200 (1984-06-01), Betlott, Jr.
patent: 4493855 (1985-01-01), Sachdev et al.
Hattori et al., "A Breakthrough to Plasma Deposited Dry-Developable E-Beam Resist," Society of Plastics Engineers, Nov. 8-10, 1982 Ellenville, N.Y.
Taylor et al., J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 872-880.

Affiliated with

Also associated with

Rating

Method for forming fine multilayer resist patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming fine multilayer resist patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming fine multilayer resist patterns will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1479168