Method for improving the reactant gas flow in a reaction chamber

Details Method for improving the reactant gas flow in a reaction chamber Method for improving the reactant gas flow in a reaction chamber

1989-03-28

1992-03-17

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156612, 118730, 422245, 4272555, C30B 3500, C30B 2304, C30B 2514

Patent

active

050965344

ABSTRACT:
An epitaxial deposition method for processing a single wafer and a reaction chamber for conducting the method. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber. Two types of reactant gas injectors can be used for controlling the velocity profile of injected gases.

REFERENCES:
patent: 3981791 (1976-09-01), Rosvold
patent: 4284033 (1981-08-01), del Rio
patent: 4714594 (1987-12-01), Mircea
patent: 4800105 (1989-01-01), Nakayama et al.
patent: 4839312 (1989-06-01), Ovshinksy et al.

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