Semiconductor storage device having ferroelectric film

Details Semiconductor storage device having ferroelectric film Semiconductor storage device having ferroelectric film

1992-10-26

1995-01-24

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365185, 365147, 257295, G11C 1122

Patent

active

053847296

ABSTRACT:
A semiconductor storage device and a method for producing the same wherein a source region 2 and a drain region 3 are formed in a semiconductor substrate. Films 14 and 15 of low dielectric constant are formed respectively on the source region 2 and the drain region 3. A ferroelectric film 7 is formed on a channel region 6 surrounded by the source region 2 and the drain region 3. The ferroelectric film 7 is patterned on the films 14 and 15. According to the present invention, semiconductor material is not damaged during the formation and a dielectric polarization efficiency is increased.

REFERENCES:
patent: 5227855 (1993-07-01), Momose
Arnett, IBM TDB, vol. 15, No. 9, Feb./73, "Ferroelectric Fet Device", pp. 2825-2826.

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