Method for drawing a monocrystal from a melt formed about a wett

Details Method for drawing a monocrystal from a melt formed about a wett Method for drawing a monocrystal from a melt formed about a wett

1975-06-09

1976-12-28

Bascomb, Jr., Wilbur L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 23273SP, C01B 3302, B01J 1718

Patent

active

040000303

ABSTRACT:
Growth of shaped crystals, such as silicon, germanium, garnet, sapphire and the like, using a crucible to contain a melt in conjunction with a wettable submerged projection extending above the level of the melt over which is formed a convex or raised meniscus of the melt by surface tension. A seed crystal is brought in contact with the meniscus and then drawn upwardly so that the melt of the meniscus crystallizes out and grows to the crystal lattice of the seed as a continuation thereof.

REFERENCES:
patent: 3002824 (1961-10-01), Francois
patent: 3033660 (1962-05-01), Okkerse
patent: 3077384 (1963-02-01), Enk
patent: 3096158 (1963-07-01), Gaule
patent: 3291574 (1966-12-01), Pierson
patent: 3591348 (1971-07-01), LaBelle
patent: 3650703 (1972-03-01), LaBelle
patent: 3687633 (1972-08-01), LaBelle
patent: 3701636 (1972-10-01), LaBelle
patent: 3765843 (1973-10-01), LaBelle
patent: 3853489 (1974-12-01), Bailey

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