Method to form a low resistant bond pad interconnect

Details Method to form a low resistant bond pad interconnect Method to form a low resistant bond pad interconnect

1993-10-01

1995-01-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437194, H01L 2144

Patent

active

053842847

ABSTRACT:
The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.

REFERENCES:
patent: 5170930 (1992-12-01), Dolbear et al.
patent: 5173765 (1992-12-01), Nakayoshi et al.
patent: 5249728 (1993-10-01), Lam
patent: 5290588 (1994-03-01), Romero et al.

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