Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1998-09-30
1999-11-09
Nguyen, Matthew
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
323313, G11C 700, G05F 316
Patent
active
059826770
ABSTRACT:
A compensated voltage regulator of the type used in programming non-volatile memory cells of a memory cell matrix that is divided into sectors. The voltage regulator includes a comparator that is connected to a supply voltage. A first input terminal of the comparator is supplied a reference voltage, and a second input terminal is feedback connected to a program line. The control terminal of an output transistor is connected to an output terminal of the comparator, and a conduction terminal of the output transistor is connected to the memory cells by the program line. An output current is passed through a conduction terminal of the output transistor. Further, a compensation circuit is powered by the supply voltage. An input of the compensation circuit is connected to the output terminal of the comparator and to the output transistor, and an output of the compensation circuit is also connected to the output terminal of the comparator. This causes the duplication of a current that is suitably attenuated with respect to the output current and is useful in modifying the output voltage of the comparator.
REFERENCES:
patent: 5212458 (1993-05-01), Fitzpatrick et al.
patent: 5220273 (1993-06-01), Mao
patent: 5602790 (1997-02-01), Mullarkey
patent: 5815437 (1998-09-01), Pascucci et al.
European Search Report dated Jun. 29, 1998 with annex on European Application No. 97830484.
Fontana Marco
Montanaro Massimo
Buchenhorner Michael J.
Nguyen Matthew
STMicroelectronics S.r.l.
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