Semiconductor device having interlayer insulating film and metho

Details Semiconductor device having interlayer insulating film and metho Semiconductor device having interlayer insulating film and metho

1995-06-07

2000-01-11

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 49, 257 59, 257344, 257350, 257408, H01L 2701, H01L 2712, H01L 310392, H01L 2904

Patent

active

060139285

ABSTRACT:
An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

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