Semiconductor resistor using back-to-back zener diodes

Details Semiconductor resistor using back-to-back zener diodes Semiconductor resistor using back-to-back zener diodes

1997-03-31

1998-06-02

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257106, 257393, H01L 298605, H01L 29866, H01L 2978

Patent

active

057604509

ABSTRACT:
Very high resistance values may be necessary in integrated circuits, for example in the gigaohm range, for example for realizing RC times of 1 ms to 1 s. Such resistance values cannot or substantially not be realized by known methods in standard i.c. processes because of the too large space occupation. In addition, known embodiments are usually strongly dependent on the temperature. According to the invention, therefore, two zener diodes (10, 4; 11, 4) connected back-to-back are used as the resistor. The current through each zener diode is mainly determined by band--band tunneling when the voltage is not too high, for example up to approximately 0.2 V. This current has a value such that resistors in the giga range can be readily realized on a small surface area. Since the current is mainly determined by intrinsic material properties of silicon, the temperature dependence is very small. The resistor may furthermore be manufactured in any standard CMOS process or bipolar process.

REFERENCES:
patent: 3341750 (1967-09-01), Lambert et al.
patent: 3508084 (1970-04-01), Warner
patent: 3882529 (1975-05-01), Warner
patent: 5293058 (1994-03-01), Tsividis

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