Silicon on insulator with active buried regions

Details Silicon on insulator with active buried regions Silicon on insulator with active buried regions

1995-10-23

1998-06-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257352, H01L 2176

Patent

active

057604436

ABSTRACT:
A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

REFERENCES:
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4880753 (1989-11-01), Meakin et al.

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