Metal oxide semiconductor device

Details Metal oxide semiconductor device Metal oxide semiconductor device

1996-10-25

1998-06-02

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057604410

ABSTRACT:
A p-type high concentration doped region is formed in a p-type semiconductor substrate between a n-type doped region as part of an input protection circuit and another n-type doped region as part of internal circuitry. A plate is divided into two over the high concentration doped region. The high concentration doped region suppresses generation of a parasitic MOS transistor with the plate for a gate, one of the n-type doped regions for a source, and the other for a drain.

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