Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-28
2000-01-11
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438659, H01L 2144
Patent
active
060135786
ABSTRACT:
A metal wiring structure includes a conduction line, an insulator film for electrically insulating the conduction line, and a transmutation layer formed as the density of a portion of the insulator film adjacent to the conduction line is increased or by adding impurities to the insulator film. A metal wiring forming method for a semiconductor device, includes the step of forming a trench in a given portion of a silicon oxidation film formed on a semiconductor substrate, forming a transmutation layer on a surface of the silicon oxidation film, and depositing a conductive material on the transmutation layer to form a conduction line, whereby diffusion of the conductive material is prevented.
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A Dual Damascene Hard Metal Capped CU and Al-Alloy for Interconnected Wiring of ULSI Circuits, H.M. Dalal et al, 0-7803-1450-6, 1993 IEEE, IDEM 93-273, pp. 11.4.1 to 11.4.4.
Berry Renee R.
Bowers Charles
LG Semicon Co. Ltd.
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