Faster NAND for microprocessors utilizing unevenly sub-nominal P

Details Faster NAND for microprocessors utilizing unevenly sub-nominal P Faster NAND for microprocessors utilizing unevenly sub-nominal P

1998-01-13

1999-11-09

Tokar, Michael

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

326103, H03K 19094, H03K 1920

Patent

active

059821990

ABSTRACT:
There is provided an improved NAND logic gate circuit for use in microprocessors and a method for fabricating the same so as to be capable of operating at higher speeds. The NAND logic gate circuit includes a parallel structure formed of a plurality of P-channel MOS together in parallel and a stacked structure formed of a plurality of N-channel MOS transistors all connected together in series. Each of the plurality of P-channel MOS transistors has a first sub-nominal channel length and reduced overlap capacitance. Each of the plurality of N-channel MOS transistors has a second sub-nominal channel length and reduced overlap capacitance.

REFERENCES:
patent: 5038192 (1991-08-01), Bonneau et al.
patent: 5083178 (1992-01-01), Otsu
patent: 5140594 (1992-08-01), Haulin
patent: 5420447 (1995-05-01), Waggoner

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