Semiconductor device using an SOI substrate

Details Semiconductor device using an SOI substrate Semiconductor device using an SOI substrate

1997-11-25

1999-11-09

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257529, H01L 2701, H01L 2712

Patent

active

059820055

ABSTRACT:
A semiconductor device includes an SOI substrate, trench memory cells including trench capacitors formed in the SOI substrate and a mesa or trench isolation region for isolating the trench memory cells. As a result, the trench memory cells are isolated more completely and soft errors are reduced.

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