Light valve having a semiconductor film and a fabrication proces

Details Light valve having a semiconductor film and a fabrication proces Light valve having a semiconductor film and a fabrication proces

1993-01-27

1999-11-09

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 72, 257286, 257291, 257348, 257349, 257351, H01L 2994

Patent

active

059820020

ABSTRACT:
A miniaturized light valve with a surface area on the order of several centimeters may be successfully formed using a composite substrate and an opposing substrate which has thereon an electrode and which is bonded to the composite substrate at a predetermined gap therefrom. An electro-optical material, such as a liquid crystal compound, is confined within the gap. The composite substrate includes a single crystal layer of a semiconductor material provided on a lower level insulation layer. The single crystal layer is formed with a source region, a drain region, and a channel region of a MOS transistor, and a gate insulation film is provided on the single crystal layer in alignment with the channel region. Further, a gate electrode is provided on the gate insulation film. The composite substrate further includes a pixel electrode on the upper major surface of an insulation layer deposited over the MOS transistor and in contact with the drain region. The single crystal semiconductor thin film is limited to 0.3 microns in thickness resulting in a light valve characterized in that a parasitic channel and a bipolar action in the MOS transistor are eliminated for the purpose of suppressing an increase in the OFF current, or leakage current caused by incident light radiation onto the transistors.

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