Method of fabricating semiconductor device having epitaxially gr

Details Method of fabricating semiconductor device having epitaxially gr Method of fabricating semiconductor device having epitaxially gr

1995-06-29

1998-06-02

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438157, 438164, 148DIG150, H01L 2186

Patent

active

057598789

ABSTRACT:
A method of fabricating a semiconductor device comprises the steps of preparing a transparent support substrate, forming a first gate electrode comprising semiconductor single crystal silicon by epitaxial growth on the transparent support substrate, forming an insulating film over the first gate electrode, forming a through-hole in the insulating film to expose a portion of the first gate electrode, laterally and epitaxially growing a semiconductor single crystal silicon thin film over the transparent substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region.

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