Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1996-08-13
1998-12-15
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
H01L 21316
Patent
active
058496440
ABSTRACT:
The invention provides semiconductor processing methods of depositing SiO.sub.2 on a substrate. In a preferred aspect, the invention provides methods of reducing the formation of undesired reaction intermediates in a chemical vapor deposition (CVD) decomposition reaction. In one implementation, the method is performed by feeding at least one of H.sub.2 O and H.sub.2 0.sub.2 into a reactor with an organic silicon precursor. For example, in one exemplary implementation, such components are, in gaseous form, fed separately into the reactor. In another exemplary implementation, such components are combined in liquid form prior to introduction into the reactor, and thereafter rendered into a gaseous form for provision into the reactor. The invention can be practiced with or in both hot wall and cold wall CVD systems.
REFERENCES:
patent: 5182221 (1993-01-01), Sato
patent: 5360646 (1994-11-01), Morita
patent: 5420075 (1995-05-01), Homma et al.
patent: 5462899 (1995-10-01), Ikeda
patent: 5470800 (1995-11-01), Muroyama
patent: 5472913 (1995-12-01), Havemann et al.
patent: 5580822 (1992-12-01), Hayakawa et al.
patent: 5610105 (1997-03-01), Vines et al.
patent: 5710079 (1998-01-01), Sukharev
patent: 5736018 (1998-06-01), Sato
S. Wolf et al. "Terminology of CVD Reactor Design", Silicon Processing for the VLSI ERA, vol. 1, pp. 166-168 1986.
IslamRaja, et al., "Two Precursor Model for Low-Pressure Chemical Vapor Deposition Of Silicon Dioxode From Tetrethylorthosilicate", J. Vac. Sci. Technol. B, vol. 11, No. 3, May/Jun. 1993, pp. 720-726.
Crowell, John E. et al., "The Chemical Vapor Deposition of SiO.sub.2 From TEOS", Journal of Electron Spectroscopy And Related Phenomena, 54/55 (1990) pp. 1097-1104.
Haupfear, E.A. et al., "Kinetics of SiO.sub.2 Deposition From Tetraethylorthosilicate", Electrochem. Soc. vol. 141, No. 7, Jul. 1994, pp. 1943-1950.
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 1, pp. 166-171, 1986.
Bowers Charles
Micro)n Technology, Inc.
Whipple Matthew
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