Plasma CVD method for forming a semiconductor device having meta

Details Plasma CVD method for forming a semiconductor device having meta Plasma CVD method for forming a semiconductor device having meta

1997-01-22

1999-11-09

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438485, 438675, 438700, 438720, 427552, H01L 2144

Patent

active

059813881

ABSTRACT:
A plasma CVD method for forming a film of a metal such as Ti on a substrate using a mixed gas including a metal-halogen compound and hydrogen with which the surface morphology of the metal film obtained is good, there is no corrosion of a conducting material layer or the like below the metal film and residual halogen in the film is low, and a semiconductor device having a metal film formed by this method. The plasma CVD method comprises employing prescribed plasma CVD conditions such that there are more activated hydrogen species present in the plasma than are consumed in the reduction of the metal-halogen compound and surplus activated hydrogen species uniformly terminate the substrate surface so that precursors produced by dissociation of the metal-halogen compound can freely migrate over the substrate and the metal film formed has a uniform thickness and good surface morphology.

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