Semiconductor device with improved trench interconnected to conn

Details Semiconductor device with improved trench interconnected to conn Semiconductor device with improved trench interconnected to conn

1998-02-27

1999-11-09

Fahmy, Wael M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 438666, 438675, 438763, H01L 2144

Patent

active

059813776

ABSTRACT:
Disclosed is a semiconductor device having a structure in which even if a misalignment occurs an upper trench and a connection hole, that is, the upper trench is offset from the connection hole, it is possible to suppress a reduction in contact area between an interconnection material and a connection hole burying material and hence to reduce an increase in contact resistance, and which is particularly suitable for a borderless trench interconnection structure, and a method of fabricating the semiconductor device. The semiconductor device includes: a substrate; an interlayer insulating film formed on the substrate; a connection hole formed in the interlayer insulating film; a connection plug formed by burying the connection hole with a connection hole burying material; a trench formed in the interlayer insulating film; and a trench interconnection formed by burying the trench with an interconnection material. In such a semiconductor device, the connection plug enters in the trench interconnection in such a manner that at least part of a side surface of sid connection plug is brought in contact with the trench interconnection.

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