Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1997-07-10

1999-11-09

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438763, 438787, H01L 21283, H01L 21473

Patent

active

059813750

ABSTRACT:
A method of manufacturing a semiconductor device includes forming an interconnection layer patterned to predetermined shapes on a semiconductor base, forming a plasma TEOS film as a first insulating layer on the surface of the interconnection layer while reducing radio frequency (RF) power, and forming an ozone TEOS film as a second insulating layer on the first insulating layer.

REFERENCES:
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5330935 (1994-07-01), Dobuzinsky et al.
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5376590 (1994-12-01), Machida et al.
patent: 5389581 (1995-02-01), Freiberger et al.
patent: 5459108 (1995-10-01), Doi et al.
patent: 5502006 (1996-03-01), Kasagi
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5563104 (1996-10-01), Jang et al.
patent: 5605867 (1997-02-01), Sato et al.
patent: 5607880 (1997-03-01), Suzuki et al.

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