Method for manufacturing a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438598, 438655, 438738, 438751, H01L 2132

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active

059813725

ABSTRACT:
A metal utilized for forming a silicide film is left even after completion of the reaction to produce silicide. A conductive film made of a material other than the metal is grown on the metal. A local interconnection overlapping the silicide layer is formed by the conductive film and the metal remaining after formation of silicide.

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