Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-11-13
1999-01-26
Dinh, Son T.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518522, 365212, G11C 1604
Patent
active
058645047
ABSTRACT:
An electrically erasable programmable read only memory (EEPROM) capable of reducing the margin of threshold voltage is disclosed which contributes to the achievement of low-voltage driving and/or multiple-value data storage architectures. The EEPROM includes an array of memory cells that are changeable in threshold voltage for data storage of different logic levels, wherein data may be read out of any specified one of the memory cells. A read voltage applied to the memory cell is designed to have a temperature dependence substantially identical to that of the memory-cell threshold voltage. A write-verify voltage may also be designed to have the same temperature dependence as that of the memory cell. Thus, the inter-threshold margin and the read margins of the memory cell can be reduced.
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M. Bauer, et al. "A Multilevel-Cell 32Mb Flash Memory", ISSCC Digest of Technical Papers, (pp. 132-133), Feb., 1995.
Takeuchi Ken
Tanaka Tomoharu
Tanzawa Toru
Dinh Son T.
Kabushiki Kaisha Toshiba
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