DRAM with open digit lines and array edge reference sensing

Details DRAM with open digit lines and array edge reference sensing DRAM with open digit lines and array edge reference sensing

1997-02-20

1998-03-10

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

36518909, 365207, 365210, G11C 1124, G11C 700, G11C 702

Patent

active

057269319

ABSTRACT:
A memory circuit is described which increases the density of memory cells by including a reference circuit. The memory circuit has an open digit line architecture where sense amplifiers use two digit lines to sense data stored in the memory cells. One of the digit lines is used as a reference while the other digit line is active. A reference circuit is described which can be used to replace one of the digit lines connected to the sense amplifier circuit. The reference circuit models the electrical characteristics of a digit line by including a capacitor and a transistor, each sized to match the characteristics of a digit line.

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PCT Search Report for International No. PCT/US 96/20299, dated Apr. 10, 1997, completed by Authorized office Lucia Van Pinxteren, 7 pages.

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