Process for formation of epitaxial film

Details Process for formation of epitaxial film Process for formation of epitaxial film

1995-06-06

1998-12-15

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 2041923, C23K 1434

Patent

active

058491635

ABSTRACT:
A process for forming an epitaxial film on a biased substrate by sputtering a target to which a bias voltage and a plasma-generating high-frequency power are applied, wherein the film formation is carried out in an atmosphere having H.sub.2 O, CO and CO.sub.2 partial pressures controlled at 1.0.times.10.sup.-8 Torr, with the substrate temperature maintained in the range of from 400.degree. to 700.degree. C. The epitaxial film obtained by the process has excellent interface characteristics, very low impurity contents, good crystallinity and excellent step coverage, and is suitable for application to semiconductor devices.

REFERENCES:
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4800173 (1989-01-01), Kanai et al.
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4824546 (1989-04-01), Ohmi
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4999096 (1991-03-01), Nehei et al.
patent: 5500102 (1996-03-01), Ichikawa et al.
Japanese Journal of Applied Physics, vol. 19, No. 4, Apr. 1980, pp. L181-L184, Isao Yamada et al., "Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams".
Akitoshi Ishizaka et al., "Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE", Electrochemical Science and Technology, Apr. 1986, pp. 666-671.
P.C. Zalm et al., "Ion beam epitazy of silicon on Ge and Si at temperatures of 400K", Applied Physics Letters., vol. 41 No. 2, Jul. 15, 1982, pp. 167-169.
Tadatsugu Itoh et al., "Low Temperature Silicon Epitaxy by Partialy Ionized Vapor Deposition", Japanese Journal of Applied Physics, pp. 553-557 (1977.
Ohmi et al., "Formation . . . Sputtering", J. Appl. Phys. 66(10), 15 Nov. 1989, pp. 4756-4766.
Vossen et al., "Thin Film Process", Academic Press, 1978, pp. 46-48.
Maissel et al. "Handbook of Thin Film Technology", McGraw Hill Book Co., 1975, pp. 4-10 to 4-22.

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