Staggered thin film transistor with transparent electrodes and a

Details Staggered thin film transistor with transparent electrodes and a Staggered thin film transistor with transparent electrodes and a

1997-04-17

1999-01-26

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 79, 257749, 257742, 257 57, 349 41, 349 42, H01L 2954, H01L 2978

Patent

active

058641491

ABSTRACT:
A multi-layer structure of source/drain electrodes and an amorphous silicon layer in a forward staggered thin film transistor. Source/drain electrodes are selectively provided on an insulator. Each of the source/drain electrodes comprises an undoped transparent conductive film on the insulator and an impurity doped transparent conductive film extending over the undoped transparent conductive film. An amorphous silicon active layer extends over the source/drain electrodes and a top surface of the insulator so that the amorphous silicon active layer over the source/drain electrodes has an impurity diffused interface in contact with the impurity doped transparent conductive film to form ohmic contacts between the impurity doped transparent conductive film and the amorphous silicon active layer. The amorphous silicon active layer in contact with the top surface of the insulator between the source/drain electrodes is free of impurities.

REFERENCES:
patent: 4733284 (1988-03-01), Aoki
patent: 4864376 (1989-09-01), Aoki et al.

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