Process for forming fine pattern in semiconductor device

Details Process for forming fine pattern in semiconductor device Process for forming fine pattern in semiconductor device

1988-11-15

1991-06-18

Le, Hoa Van

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430156, 430273, 430394, G03F 900

Patent

active

050249193

ABSTRACT:
In the disclosed process for forming a fine pattern in a semiconductor device, an upperlayer polymeric film so photosensitive to ultraviolet light as to be opague to deep ultraviolet light upon exposure to ultraviolet light is formed on an underlayer resist photosensitive to deep ultraviolet light, provided on an underlaying layer, optionally with an interlayer formed as a barrier or isolation layer therebetween. After the upperlayer polymeric film is exposed through a mask to ultraviolet light to form therein areas opague to deep ultraviolet light with the other areas remaining transparent to deep ultraviolet light, the upperlayer polymeric film serves as a mask for the underlayer resist in subsequent blanket exposure to deep ultraviolet light. After removal of the upperlayer polymeric film and the interlayer if any, the underlayer resist is developed to form a pattern.

REFERENCES:
patent: 4663275 (1987-05-01), West et al.
patent: 4705729 (1987-11-01), Sheats
patent: 4770739 (1988-09-01), Orvek et al.

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