Single crystal thin films

Details Single crystal thin films Single crystal thin films

1986-05-28

1987-11-17

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156620, 156DIG73, 156DIG80, 156DIG88, 156DIG102, C30B 1312

Patent

active

047072172

ABSTRACT:
A system and techniques are disclosed for forming single crystal films with the use of energy sources that can create shaped hot zones. The energy may be from any source provided that it can be shaped, directed and can heat the film to become molten and recrystallized by liquid phase epitaxy. The hot zone created by the heat source is shaped such that the angle defined by the scanned hot zone's trailing liquid edge is smaller than the angle defined by the intersection of the crystal's slowest growth planes.

REFERENCES:
patent: 3977934 (1976-08-01), Lesk
patent: 4046618 (1977-09-01), Chandhuri et al.
patent: 4196041 (1980-04-01), Baghdadi et al.
patent: 4345967 (1982-08-01), Cook
patent: 4659422 (1987-04-01), Sakurai
Aklufi, "The Crystallization of Thin Silicon Films with Laser Shaped Hot es", PhD Thesis, (6/1985).

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