Plasma generating device and method of plasma processing

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, 156662, H01L 2100

Patent

active

052214273

ABSTRACT:
A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radicals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.

REFERENCES:
patent: 4341616 (1982-07-01), Nagatomo et al.
patent: 4551221 (1985-11-01), Axenov et al.
patent: 4979467 (1990-12-01), Kamaji et al.
patent: 5048457 (1991-09-01), Hyman et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma generating device and method of plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma generating device and method of plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma generating device and method of plasma processing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1439260

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.