Method for synthesis and processing of continuous monocrystallin

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156610, 156DIG68, 423446, 20419712, 427523, C30B 2904

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active

052214117

ABSTRACT:
Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The implanted region of the substrate is then annealed to produce a diamond thin film on the non-diamond substrate. Also disclosed are the diamond thin films on non-diamond lattice-plane matched substrates produced by this method. Preferred substrates are lattice and plane matched to diamond such as copper, a preferred implanting method is ion implantation, and a preferred annealing method is pulsed laser annealing.

REFERENCES:
patent: 4863529 (1989-09-01), Imai et al.
patent: 4869923 (1989-09-01), Yamazaki
patent: 4915977 (1990-04-01), Okamoto et al.
patent: 4917953 (1990-04-01), Hioki et al.
patent: 4997636 (1991-03-01), Prins
Current Issues and Problems in the Chemical Vapor Deposition of Diamond, Walter Yarborough and Russell Messier, Science, vol. 247, pp. 688 to 696, Feb. 9, 1990.
Molecule of the Year, Editorial, Science, vol. 250, pp. 1637 to 1641, Dec. 9, 1990.
Diamond--Ceramic Coating of the Future, Karl Spear, J. Am. Ceram. Soc., vol. 72, No. 2, pp. 171 to 191, 1989.
I. Amato, "Fanning the Hope for Flat Diamond," Research News, 375 (Apr. 19, 1991).
J. Narayan et al., "Laser Methods for Synthesis and Processing of Continuous Diamond Films on Nondiamond Substrates," Science 252, 416-418 (1991).
Robertson et al, "Epitaxial Growth of Diamond Films on Si(III) at Room Temperature by Mass-Selected Low Energy (.sup.+ Beams", Science, vol. 243 Feb. 24, 1989 pp. 1047-1050.

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