Method of making a dynamic memory array

Details Method of making a dynamic memory array Method of making a dynamic memory array

1980-04-07

1982-08-24

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148187, H01L 2122, H01L 2126

Patent

active

043453643

ABSTRACT:
A dynamic read/write memory cell of the one transistor type is made by a single-level polysilicon process in which the word lines and the gates of the access transistors are formed by the metal strips. No metal-to-silicon or metal-to-polysilicon contacts are needed. The access transistors are made by etching through polysilicon strips which are the capacitor bias plates. The size of the transistor is not determined by alignment accuracy.

REFERENCES:
patent: 3985591 (1976-10-01), Arita
patent: 4035820 (1977-07-01), Matzen
patent: 4055444 (1977-10-01), Rao
patent: 4129936 (1978-12-01), Takei
patent: 4240092 (1980-12-01), Kuo
patent: 4258466 (1981-03-01), Kuo et al.

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