Method of fabricating semiconductor device by dry process utiliz

Details Method of fabricating semiconductor device by dry process utiliz Method of fabricating semiconductor device by dry process utiliz

1984-04-26

1985-09-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 1566591, 204192EC, 204192E, 204298, 118728, 118 501, 118620, 427 38, H01L 21306, B44C 122, C23F 102, B05D 306

Patent

active

045404666

ABSTRACT:
Photochemical technique is applied, in a unique manner, to the so-called dry process intended for etching a substrate or for deposition thereon in the presence of a gas supplied into a chamber containing the substrate. The interior of this chamber is so structured as to produce a higher pressure gas region and a lower pressure gas region. A beam of light rays is caused to impinge onto the former region to activate the particles of gas. The resulting gas containing the activated particles is fed onto the substrate placed in the latter region as carried through at least one passageway provided between the two regions by the flow of gas caused due to the difference in pressure of gas in these two regions. Thus, the aimed etching or deposition is carried out without damaging the surface of the substrate which would occur by the collision of the otherwise heavily energized particles against the surface of the substrate.

REFERENCES:
patent: 2841477 (1958-07-01), Hall
patent: 3122463 (1964-02-01), Ligenza et al.
patent: 4158589 (1979-06-01), Keller et al.
patent: 4183780 (1980-01-01), McKenna et al.
patent: 4259145 (1981-03-01), Harper et al.
H. Akiya, "Directional Dry Etching of Silicon by a Reactine Nozzle-Jet", Proceeding of Symposium on Dry Process, pp. 119-126, (Oct. 1981), Tokyo.

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