Organic field-effect transistor and production thereof

Details Organic field-effect transistor and production thereof Organic field-effect transistor and production thereof

1997-09-10

1998-12-29

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438782, 257 40, H01L 2131

Patent

active

058541390

ABSTRACT:
A field-effect transistor using a conjugated oligomer having an ionization potential of 4.8 eV or above in the semiconductor layer thereof works stably and has a long life-time and can be used in a liquid crystal display device as a switching element to give excellent contrast and good performances.

REFERENCES:
patent: 5017975 (1991-05-01), Ogawa
patent: 5563424 (1996-10-01), Yang et al.

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