Process for fabricating semiconductor device

Details Process for fabricating semiconductor device Process for fabricating semiconductor device

1995-06-01

1998-12-29

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438487, H01L 21336, H01L 21324

Patent

active

058540962

ABSTRACT:
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film., a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

REFERENCES:
patent: 4659392 (1987-04-01), Vasudev
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5424230 (1995-06-01), Wakai
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5576222 (1996-11-01), Arai et al.
patent: 5597741 (1997-01-01), Sakamoto et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages) No date.
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640. No month.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993. No month.
"Crystallized Si Films By Low-Temperature Rapid Thermal Annealing Of Amorphous Silicon", R. Kakkad, J. Smith, W.S. Lau, S.J. Fonash, J. Appl. Phys. 65 (5), Mar. 1, 1989, 1989 American Institute of Physics, pp. 2069-2072.
"Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low Temperature Processing", G. Liu, S.J. Fonash, Appl. Phys. Lett. 62 (20), May 17, 1993, 1993 American Institute of Physics, pp. 2554-2556.
"Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing", Gang Liu and S.J. Fonash, Appl. Phys. Lett. 55 (7), Aug. 14, 1989, 1989 American Institute of Physics, pp. 660-662.
"Low Temperature Selective Crystallization of Amorphous Silicon", R. Kakkad, G. Liu, S.J. Fonash, Journal of Non-Crystalline Solids, vol. 115, (1989), pp. 66-68 No month.
Fuse et al., "Performance of Poly-Si Thin Film Transistors Fabricated by Excimer Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a Si Films With or Without Solid-Phase Crystallization", Solid State Phenomena, vols. 37-38, 1994, pp., No month.
Bonnel et al., "Polycrystalline Silicon Thin-Film Transistors With Two Step Annealing Process", IEEE Electron Device Letters, vol. 14, No., 12, Dec. 1993, pp. 551-553.
Caune et al., "Combined CW Laser and Furnace Annealing of Amorphous Si and Ge in Contact With Some Metals", Applied Surface Science, vol. 36, 1989, pp. 597-604, No month.
Nam et al., "Thin-Film Transistors With Polycrystalline Silicon Prepared by a New Annealing Method", Jpn. J. Appl. Phys., vol. 32, 1993, pp. 1908-1912, No month.

Affiliated with

Also associated with

Rating

Process for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1423988