Semiconductor device having a particular CMOS structure

Details Semiconductor device having a particular CMOS structure Semiconductor device having a particular CMOS structure

1996-02-08

1998-03-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257372, H01L 2976, H01L 2994, H01L 31062

Patent

active

057264767

ABSTRACT:
The semiconductor, device comprising a P type semiconductor substrate, first and second P-wells, an N-well between the first and the second P-wells, trench element-isolating films for electrically separating the wells from each other and the first P-well from the P type semiconductor substrate, and an N type buried region formed below a first P-well between the trench element-isolating films, which is suitable to high integration and improved in operating speed.

REFERENCES:
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4862240 (1989-08-01), Watanabe et al.
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 5006476 (1991-04-01), De Jong et al.
patent: 5015594 (1991-05-01), Chu et al.
patent: 5356821 (1994-10-01), Naruse et al.

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