Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-03
1993-01-26
Dzierzynski, Paul M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257401, 257408, 257900, H01L 2978, H01L 2702, H01L 2348
Patent
active
051826194
ABSTRACT:
Source and drain electrodes which are overlapped and elevated with respect to an inverse-T gate electrode provide low lateral electric field, low source-drain series resistance, and uniform source and drain doping profiles while maintaining a compact layout. In one form of the invention, a semiconductor device (10) has source and drain electrodes (40) which are elevated and overlap shelf portions (21) of an inverse-T gate electrode (19). LDD regions (28) are formed in a substrate (12) and partially underlie the gate electrode. Facets (41) of the selectively deposited source and drain electrodes overlie the shelf portions of the gate electrode, thereby creating uniform doping profiles of heavily doped regions (42).
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"A Novel Submicron LDD Transistor with Inverse-T Gate Structure," by T. Huang et al., Technical Digest of the International Electron Devices Meeting, 1986, article 31.7, pp. 742-745.
"Elevated Source/Drain MOSFET," by S. Wong et al., Technical Digest of the International Electron Devices Meeting, 1984, article 28.4, pp. 634-637.
Dzierzynski Paul M.
Goddard Patricia S.
Motorola Inc.
Shingleton Michael B.
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