Semiconductor device and lead frame therefore

Details Semiconductor device and lead frame therefore Semiconductor device and lead frame therefore

1994-03-16

1996-03-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Entirely of metal except for feedthrough

257692, 257678, H01L 2310, H01L 2348, H01L 2352, H01L 2302

Patent

active

054970326

ABSTRACT:
A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

REFERENCES:
patent: 4884124 (1989-11-01), Mori et al.
patent: 5021865 (1991-06-01), Takahashi et al.
patent: 5053855 (1991-10-01), Michii et al.
patent: 5175060 (1992-12-01), Enomoto et al.
patent: 5245215 (1993-09-01), Sawaya

Affiliated with

Also associated with

Rating

Semiconductor device and lead frame therefore does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and lead frame therefore, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and lead frame therefore will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1414709