Semiconductor memory device having a floating gate with improved

Details Semiconductor memory device having a floating gate with improved Semiconductor memory device having a floating gate with improved

1994-08-31

1996-03-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, H01L 29788

Patent

active

054970180

ABSTRACT:
A method for fabricating a flash-EPROM comprises the steps of forming a first gate insulation film and a second gate insulation film on a semiconductor substrate so as to respectively cover first and second device regions, providing a first conductor layer so as to cover both the first device region and the second device region, patterning the first conductor layer to form a floating gate electrode in correspondence to the first device region, oxidizing a surface of the first conductor layer to form a capacitor insulation film surrounding the floating gate electrode, providing a second conductor layer on the first conductor layer as to bury underneath the floating gate electrode covered by the capacitor insulation film, patterning the second conductor layer on the first device region to form a control gate electrode, exposing the first conductor layer in correspondence to the second device region, and patterning the first conductor layer remaining on the second element region to form a gate electrode of a peripheral transistor.

REFERENCES:
patent: 4766088 (1988-08-01), Kono et al.
patent: 5013674 (1991-05-01), Bergemont
patent: 5066992 (1991-11-01), Wu et al.
patent: 5081054 (1992-01-01), Wu et al.
patent: 5089433 (1992-02-01), Anand et al.
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5188976 (1993-02-01), Kume et al.
patent: 5225361 (1993-07-01), Kakiuchi et al.
patent: 5242850 (1993-09-01), Tasaka
patent: 5326999 (1994-07-01), Kim et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device having a floating gate with improved does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having a floating gate with improved, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a floating gate with improved will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1414575