Process for selective deposition of tungsten on semiconductor wa

Details Process for selective deposition of tungsten on semiconductor wa Process for selective deposition of tungsten on semiconductor wa

1989-12-01

1991-08-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437225, 437228, 437245, 148DIG51, 156625, 156646, 118715, 118733, H01L 2100, H01L 2102, H01L 21203, H01L 21302

Patent

active

050432990

ABSTRACT:
An improved process for the selective deposition of tungsten on a masked semiconductor wafer is disclosed which comprises cleaning the surfaces of the wafer in an air-tight cleaning chamber, then transferring the cleaned wafer to a vacuum deposition chamber such as a CVD chamber for selective deposition of tungsten thereon without exposing the cleaned wafer to conditions which would recontaminate the cleaned wafer prior to said deposition, and then selectively depositing tungsten on the unmasked surfaces of the cleaned wafer.

REFERENCES:
patent: 4579609 (1986-04-01), Reif et al.
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4786352 (1988-11-01), Benzing
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 399-404.
Coburn, J., Plasma-Assisted Etching, Plasma Chem. and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-9, 28-29, 36-41.

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