Semiconductor device with two different threshold voltages

Details Semiconductor device with two different threshold voltages Semiconductor device with two different threshold voltages

1995-02-13

1996-04-09

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257372, 257371, H01L 2976, H01L 2994

Patent

active

055064388

ABSTRACT:
A semiconductor MOSFET device manufactured by a process starting with a doped semiconductor substrate with a P-well and an N-well and field oxide structures on the surface of the P-well and the N-well separating the surfaces of the P-well and the N-well into separate regions and a silicon dioxide film on the remainder of the surface of the P-well and the N-well comprising the steps as follows: forming a mask over the N-well and an under sized mask over one of the separate regions of the P-well performing a field ion implantation of V.sub.t ' ions into the P-well, removing the mask over the portion of the P-well, performing a blanket ion implantation of V.sub.t1 ions over the entire device.

REFERENCES:
patent: 4613885 (1986-09-01), Haken
patent: 4716451 (1987-12-01), Hsu et al.

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