MOS type semiconductor device having a high ON current/OFF curre

Details MOS type semiconductor device having a high ON current/OFF curre MOS type semiconductor device having a high ON current/OFF curre

1991-11-21

1995-03-07

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257 72, 257350, 257352, H01L 2701, H01L 2904, H01L 31036, H01L 2712

Patent

active

053960998

ABSTRACT:
A MOS type semiconductor device includes a thin-film semiconductor, a gate oxide film, and a gate. The thin-film semiconductor has a drain region, a source region, and a channel region arranged between these two regions. The gate oxide film is formed on the thin-film semiconductor. The gate is formed in correspondence with the channel region via the gate oxide film. The thin-film semiconductor is formed such that the film thickness of the drain region and the source region is made smaller than the film thickness of the channel region.

REFERENCES:
patent: 4425572 (1984-01-01), Takafuji et al.
patent: 4715930 (1987-12-01), Diem
patent: 4880753 (1989-11-01), Meakin et al.

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