Solid-state imaging device having contact buffer layer interconn

Details Solid-state imaging device having contact buffer layer interconn Solid-state imaging device having contact buffer layer interconn

1994-03-08

1996-04-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257290, 257751, 257754, 257756, H01L 31062, H01L 31113

Patent

active

055064345

ABSTRACT:
V-shaped contact buffer layers of polycrystalline silicon are disposed between ring-shaped gate electrodes of thin-film polycrystalline silicon of amplifying pixel transistors and vertical scanning lines. The contact buffer layers and the ring-shaped gate electrodes are connected to each other by contacts, and the contact buffer layers and the vertical scanning lines are connected to each other by contacts which are positionally displaced from the above contacts. The channel length of the ring-shaped gates is rendered constant in all areas, and a potential shift is prevented from occurring in gate contacts for thereby avoiding operation characteristic degradations of the pixel transistors.

REFERENCES:
patent: 4733286 (1988-03-01), Matsumato
patent: 4853341 (1989-08-01), Nishioka et al.
patent: 4901129 (1990-02-01), Hynecek
patent: 5142346 (1992-08-01), Hynecek
patent: 5192988 (1993-03-01), Yoshii
patent: 5235195 (1993-08-01), Tran et al.
patent: 5394013 (1995-02-01), Oku et al.

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