Semiconductor static random access memory device having memory c

Details Semiconductor static random access memory device having memory c Semiconductor static random access memory device having memory c

1996-10-30

1998-06-23

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

36518911, 36523006, G11C 1100

Patent

active

057711909

ABSTRACT:
A static type random access memory cell stores a data bit supplied from a bit line pair through two p-channel enhancement type access transistors gated by a word line in a two-stable latch circuit powered with a positive high power voltage and a positive low power voltage, and the positive low power voltage is higher than an active level on the word line so that the two-stable latch circuit certainly changes the state depending upon the logic level of a write-in data bit.

REFERENCES:
patent: 5303190 (1994-04-01), Pelley, III
patent: 5418749 (1995-05-01), Suda et al.
patent: 5453949 (1995-09-01), Wiedmann et al.
patent: 5574687 (1996-11-01), Nakase
H. Okamura et al., "A 1 ns, 1 W, 2.5 V, 32 kb NTL-CMOS SRAM Macro Using a Memory Cell with PMOS Access Transistors", IEEE Journal of Solid-State Circuits, vol. 30, No. 11, Nov. 1995 pp. 1196-1202.

Affiliated with

Also associated with

Rating

Semiconductor static random access memory device having memory c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor static random access memory device having memory c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor static random access memory device having memory c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1399190